发明名称 Microelectromechanical system devices having through substrate vias and methods for the fabrication thereof
摘要 Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.
申请公布号 US9469523(B2) 申请公布日期 2016.10.18
申请号 US201514694908 申请日期 2015.04.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Liu Lianjun
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. A Microelectromechanical Systems (“MEMS”) device, comprising: a substrate having a top surface and a bottom surface; a backside conductor formed over the bottom surface of the substrate; a filled Through-Substrate-Via (TSV) extending through the substrate and contacting the backside conductor; a dielectric layer disposed over the top surface of the substrate; a patterned transducer layer disposed over the dielectric layer and patterned to include a primary transducer structure; a patterned interconnect layer located between the dielectric layer and the patterned transducer layer, the patterned interconnect layer separated from the primary transducer structure by an air gap and patterned to include an interconnect line in ohmic contact with the filled TSV; and an electrically-conductive plug extending from the primary transducer structure, through the air gap, and to the interconnect line such that an electrically-conductive path is provided from the primary transducer structure, through the electrically-conductive plug, through the interconnect line, through the filled TSV, and to the backside conductor; wherein the electrically-conductive plug extends into the primary transducer structure.
地址 Austin TX US