Optically ignited semiconductor rectifier - has capacitor in parallel with rectifier and resistor in series with emitter through which increased potential is applied

摘要

The rectifier has a first contacted emitter layer and an adjacent contacted control base layer. there is a following main base layer, and an adjacent second contacted emitter layer. The excitation radiation is applied either to the area of the junction between control base and main base layers, or to the irradiation area of the first emitting layer. When the forward blocking voltage is raising, a potential increase corresponding to the control base layer in the ignition zone is applied to the first emitter layer ignition zone through a capacitor is parallel to the rectifier, and a resistor in series with the first emitter layer.