A method for growing a compound semiconductor and a method for producing a semiconductor laser.

摘要

A method for growing a compound semiconductor and a method for producing a semiconductor laser are provided, which comprises a first step of thermal cleaning of the GaAs layer (4) surface by raising the temperature of the substrate (3) and irradiating an arsenic molecular beam onto the substrate (3) prior to the growth of AlxGa1-xAs; and a second step of removing the GaAs layer (4) by etching by raising the temperature of the substrate further than the first step and irradiating a gallium molecular beam and an arsenic molecular beam at the same time onto the substrate, in which a growth rate of the GaAs layer (4) is set lower than that of an evaporation rate thereof. <IMAGE>