发明名称 |
Technique for forming a gate electrode by using a hard mask |
摘要 |
The anisotropic etch process for forming circuit elements such as a gate electrode is accomplished by using a hard mask instead of a resist feature, thereby avoiding a complex resist trim process when critical dimensions are required, which are well below the resolution of the involved photolithography. Moreover, the critical dimension may be adjusted by means of a deposition process rather than by a resist trim process.
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申请公布号 |
US7151055(B2) |
申请公布日期 |
2006.12.19 |
申请号 |
US20040974119 |
申请日期 |
2004.10.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AMINPUR MASSUD;HELLIG KAY |
分类号 |
H01L21/4763;H01L21/28;H01L21/332;H01L21/336;H01L29/78 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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