发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the service life of wiring from deteriorating by dissipating Joule's heat generated from the wiring effectively. SOLUTION: Heat conducting layers 11-13 composed of a material having high thermal conductivity are provided in the same layer as wiring layers 2, 4, 6. One wiring layer 2, 4, 6 is coupled thermally with the heat conducting layer 11-13 in other layer in order to dissipate heat generated therefrom through a heat dissipating body located contiguously to the heat conducting layer 11-13 in other layer on the outer surface of a semiconductor device. A heat plate formed on the upper surface of semiconductor substrate or semiconductor device is employed as the heat dissipating body. Since Joule's heat generated from the wiring layer can be discharged through thermal conduction, temperature rise of wiring can be suppressed. Consequently, service life of the wiring is prolonged and the current density can be increased.
申请公布号 JPH09213696(A) 申请公布日期 1997.08.15
申请号 JP19960017254 申请日期 1996.02.02
申请人 HITACHI LTD 发明人 SAKIMOTO MASAKAZU;HINODE KENJI;KONDO SEIICHI;IDE AKIRA;YAMAGUCHI TAKASHI
分类号 H01L23/52;H01L21/3205 主分类号 H01L23/52
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