发明名称 EXPOSURE METHOD
摘要 PROBLEM TO BE SOLVED: To prevent generation of distortion of a shot region exposed on a wafer when an angle of inclination between the running direction of a wafer stage and a reference mark plate is changed. SOLUTION: A pattern image of a reticle 12 is exposed to a light on a shot region on a wafer 5, by scanning the wafer 5 on a Zθaxis driving stage 4 to an exposure region 62, synchronously with the scanning of the reticle 12 on a fine driving stage 11 of a reticle to an illumination region 61. A plurality of reference marks are formed on a reference mark plate 6, and corresponding alignment marks are formed on the reticle 12. Amount of position deviation of the reference marks and the alignment marks are measured by scanning the fine driving stage 11 for a reticle and the Zθaxis driving stage 4 in the corresponding scanning directions. The scanning direction of the reticle 12 is corrected by the amount of position deviation.
申请公布号 JPH10144587(A) 申请公布日期 1998.05.29
申请号 JP19960298756 申请日期 1996.11.11
申请人 NIKON CORP 发明人 NISHI TAKECHIKA
分类号 G03F9/00;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F9/00
代理机构 代理人
主权项
地址