| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device of a two-layer gate structure and a method for reading all pixels capable of operating 4-phase driving method. SOLUTION: This image pickup device has an all pixels reading structure and has a photoelectric transformation region 4 in unit pixel of a semiconductor substrate 1, and a vertical transfer CCD region 5 for reading and transferring signal electric charges accumulated in the photoelectric transformation region 4 by performing 4-phase driving using two pairs of vertical transfer electrodesϕV1,ϕV2,ϕV3,ϕV4 of a two-layer structure formed via a gate insulation film 7. In this case, of the two pairs of vertical transfer electrodesϕV1ϕV2,ϕV3,ϕV4 of the two-layer structure, an electrode lead-out part 14 of the one pair of vertical transfer electrodes of the two-layer structure is positioned in the photoelectric transformation region 4 in the unit pixel.
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