SILICON WAFER AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To easily produce an Si wafer at low cost by using an Si wafer using one contg. B in a specified concn. and annealing it in an atmosphere having a specified H partial pressure at a specified temp. for 1min or more. SOLUTION: An Si wafer contg. B in a B concn. range of 1×10<15> -1×10<20> cm<-3> is used and annealed in an atmosphere of an H partial pressure of 1mmH2 , 0-30atm. at 800-1300 deg.C for lmin or more. This wafer is epitaxially treated as a substrate to make it possible to form a little-autodoped high quality epitaxial layer. Because of a low-concn. B layer on the surface of the wafer, the auto- doping of B can be suppressed to form a high purity epitaxial layer.