| 发明名称 |
Method for etching transistor gates using a hardmask |
| 摘要 |
An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.
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| 申请公布号 |
US5851926(A) |
申请公布日期 |
1998.12.22 |
| 申请号 |
US19960724383 |
申请日期 |
1996.10.01 |
| 申请人 |
APPLIED MATERIALS, INC |
发明人 |
KUMAR, AJAY;CHINN, JEFFREY;DESHMUKH, SHASHANK C.;JIANG, WEINAN;GUENTHER, ROLF ADOLF;MINAEE, BRUCE;WILTSE, MARK |
| 分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/3213;H01L29/78;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/28 |
| 代理机构 |
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