| 摘要 |
PROBLEM TO BE SOLVED: To form an element hard to break, having a high reverse recovery- resistant amount by using a dielectric separation substrate by a method wherein there are provided a first electrode which ohmically contacts with third and fourth impurity regions and a second electrode which Shottky-contacts with a second impurity region. SOLUTION: An n-type semiconductor substrate 11 of high resistance is formed through an insulation film 12 on a semiconductor substrate 10, and in the surface part of the n-type semiconductor substrate 11 of high resistance of a thus-constructed dielectric separation substrate, a p-type anode region 13 and an n-type cathode region 14 are formed. The p-type anode region 13 Shottky-contacts with an anode electrode, or surface concentration of the p-type anode region 13 is set to be 2.0×10<18> cm<-2> . Alternatively, a diffusion depth of the p-type anode region 13 is set to be 2μm or more. Thereby, it is possible to obtain a semiconductor element of a high breakdown voltage and hard to break in which a reverse recovery-resistant amount (1MAX) by using a dielectric separation substrate is high. |
