| 摘要 |
PROBLEM TO BE SOLVED: To achieve uniform crystallization, and to increase the diameter of a particle in a semiconductor thin film that turns into the active layer of a thin-film transistor which is integrated and formed in a thin-film semiconductor device. SOLUTION: To manufacture a thin-film semiconductor device, first a film formation process is made, and a non-single crystal semiconductor thin film 2 is formed on the surface of an insulating board 1. Then, annealing is performed, and it is subjected to laser beam 50 irradiation, the non-single crystal semiconductor thin film 2 is heated and melted once for conversion into a polycrystal in a cooling process. After this, machining is carried out, with the polycrystalline semiconductor thin film 2 as an active layer, a thin-film transistor is integrated and formed. To make uniform crystallization and to obtain large particle diameter in annealing, a laser oscillator 51 including an excimer laser beam source is used, and a laser beam 50 with a pulse width of 50 ns or larger is shaped by an optical system 53, so that each side of a rectangular section is set to 10 mm or more for successively subjecting the semiconductor thin film 2 to the laser beam irradiation.
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