Additional buffer layer for eliminating ozone/tetraethylorthosilicate sensitivity on an arbitrary trench structure

摘要

A method of fabricating a semiconductor device is provided including the steps of: (a) forming one or more protrusions on a semiconductor surface, (b) forming a first Ox/TEOS film on top and side surfaces of the protrusions and surface area portions of the semiconductor surface separating the protrusions from each other, if any, and (c) forming a second O3/TEOS film on, and covering, the first film. Illustratively, the protrusions have nitride regions at their peaks. The first film can be a low pressure (e.g., 30-70 torr) O3/TEOS film or a plasma enhanced chemical vapor deposition (PECVD) O2/TEOS film. The second film is a high pressure (e.g., 200-600 torr) O3/TEOS film. The high pressure O3/TEOS film avoids all of the disadvantages of the prior art. The low pressure O3/TEOS film or PECVD O2/TEOS film covers the nitride region of the protrusion so that the high pressure O3/TEOS film will continuously cover the entire structure with a uniform thickness.