| 发明名称 |
Semiconductor device and method of manufacture thereof |
| 摘要 |
Variations in threshold voltage among MOS devices are prevented by forming a metal gate electrode having an average grain size of 30 nm or less on a gate insulating film.
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| 申请公布号 |
US2001039107(A1) |
申请公布日期 |
2001.11.08 |
| 申请号 |
US20010877136 |
申请日期 |
2001.06.11 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI |
| 分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L21/822;H01L27/04;H01L29/49;H01L29/51;H01L29/78;H01L29/94;(IPC1-7):H01L21/320 |
主分类号 |
H01L29/43 |
| 代理机构 |
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