METHOD FOR MANUFACTURING EMBEDDED DRAM DEVICE

摘要

A method for manufacturing an embedded DRAM device is provided to restrain effectively the generation of defects due to the fall-down of a DTI(Deep Trench Isolation) layer. A DTI layer is formed on a semiconductor wafer(W) in order to isolate an embedded DRAM element. A photoresist pattern(PR) is formed on the resultant structure. The photoresist pattern has an opening portion for defining an active region. The photoresist pattern is selectively removed from a bevel region of the wafer. Then, a shallow trench is formed on the resultant structure by using the photoresist pattern as an etch mask. The shallow trench is used for defining an active region of the embedded DRAM element.