Semiconductor device and method of fabricating the same

摘要

A semiconductor device includes a semiconductor substrate comprising an active area where a first conductive channel is formed, a gate electrode formed on the active area formed on the semiconductor substrate and a gate dielectric layer interposed between the active area and the gate electrode. The semiconductor device further includes a charge generating layer formed along the interface between the active area and the gate dielectric layer on the semiconductor substrate so that fixed charges are generated around the interface.