| 摘要 |
An image sensor and a fabricating method thereof are provided to prevent optical cross-talk by forming a light shielding pattern at a boundary portion between a light receiving region and a light shielding region. A semiconductor substrate(100) has a light receiving region and a light shielding region. Photodiodes(110) are mounted on the semiconductor substrate comprising the light receiving region and the light shielding region. Interlayer dielectrics(130,140,150) are formed on the semiconductor substrate, and an upper shielding pattern(170) is formed on the interlayer dielectric to cover the light shielding region. A light shielding pattern(160) is formed in the interlayer dielectric between the substrate and the upper shielding pattern, and on an edge of the light shielding region.
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