摘要 |
An image sensor and manufacturing method thereof are provided. A semiconductor substrate can include a light blocking region and a light receiving region. A photodiode can be formed in the light blocking region and in the light receiving region. A gate can be disposed at a side of the photodiode in the light receiving region, and a light blocking gate can be disposed on the photodiode in the light blocking region. A salicide layer can be formed on the light blocking gate.
|