发明名称 |
HIGH FREQUENCY POWER AMPLIFIER CIRCUIT AND ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFIER |
摘要 |
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient lambda due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.
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申请公布号 |
US2009072906(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20080234833 |
申请日期 |
2008.09.22 |
申请人 |
TSURUMAKI HIROKAZU;NAGAI HIROYUKI;FURUYA TOMIO;ISHIKAWA MAKOTO |
发明人 |
TSURUMAKI HIROKAZU;NAGAI HIROYUKI;FURUYA TOMIO;ISHIKAWA MAKOTO |
分类号 |
H03G3/00;H03F1/30;H03F3/16;H03G1/00 |
主分类号 |
H03G3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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