发明名称 METHODS OF FORMING A CONDUCTIVE INTERCONNECT IN A PIXEL OF AN IMAGER AND IN OTHER INTEGRATED CIRCUITRY
摘要 A method of forming conductive interconnects includes forming a node of a circuit component on a substrate. A conductive metal line is formed at a first metal routing level that is elevationally outward of the circuit component. Insulative material is deposited above the first metal routing level over the conductive metal line and the circuit component. In a common masking step, a first opening is etched through the insulative material to the conductive metal line and a second opening is etched through the insulative material to the node of the circuit component that is received elevationally inward of the conductive metal line. Conductive material is concurrently deposited to within the first and second openings in respective conductive connection with the conductive metal line and the node of the circuit component. A first metal line at a second metal routing level that is above the first metal routing level is formed in conductive connection with the conductive material in the first opening. A second metal line at the second metal routing level is formed in conductive connection with the conductive material in the second opening.
申请公布号 US2009075465(A1) 申请公布日期 2009.03.19
申请号 US20070857962 申请日期 2007.09.19
申请人 FAN XIAOFENG 发明人 FAN XIAOFENG
分类号 H01L21/3205;H01L21/4763 主分类号 H01L21/3205
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