Printable inorganic semiconductor method

摘要

A method of making an inorganic semiconductor structure suitable for micro-transfer printing includes providing a growth substrate and forming one or more semiconductor layers on the growth substrate. A patterned release layer is formed on the conductor layer(s) and bonded to a handle substrate. The growth substrate is removed and the semiconductor layer(s) patterned to form a semiconductor mesa. A dielectric layer is formed and then patterned to expose first and second contacts and an entry portion of the release layer. A conductor layer is formed on the dielectric layer, the first contact, and the second contact and patterned to form a first conductor in electrical contact with the first contact and a second conductor in electrical contact with the second contact but electrically separate from the first conductor. At least a portion of the release layer is removed.

主权项

1. A method of making an inorganic semiconductor structure suitable for micro-transfer printing, comprising:
providing a growth substrate; forming an n-doped semiconductor layer on the growth substrate; forming a p-doped semiconductor layer on the n-doped semiconductor layer; forming a conductor layer on the p-doped semiconductor layer; forming a patterned release layer on the conductor; bonding a handle substrate to the release layer; removing the growth substrate to expose the n-doped semiconductor layer; removing a portion of the n-doped and p-doped semiconductor layers to form a semiconductor mesa within the area defined by the patterned release layer; removing a portion of the conductor layer to form a conductor mesa beneath the semiconductor mesa that extends past at least one edge of the semiconductor mesa and exposes a portion of the patterned release layer around the conductor mesa; forming a dielectric layer on the exposed portions of the patterned release layer, conductor mesa, and semiconductor mesa; patterning the dielectric layer to expose a first contact on the semiconductor mesa, a second contact on the conductor mesa, and an entry portion of the patterned release layer; forming a conductive layer on the patterned dielectric layer, the first contact, and the second contact; patterning the conductive layer to form a first conductor in electrical contact with the first contact and a second conductor in electrical contact with the second contact, the first conductor electrically separate from the second conductor; and removing at least a portion of the patterned release layer.