Nonvolatile memory device and operating method thereof

摘要

A nonvolatile memory device includes a channel vertically extending from a substrate, a plurality of memory cells stacked along the channel; a source region connected to a first end portion of the channel, and a bit line connected to a second end portion of the channel, wherein the first end portion of the channel that adjoins the source region is formed as an undoped semiconductor layer or a semiconductor layer doped with P-type impurities.

主权项

1. A method for operating a nonvolatile memory device, comprising:
applying a positive erase voltage to a channel through a source region; and applying a second voltage lower than the positive erase voltage to a control gate electrode of the memory cell to erase charges stored in the memory cell through F-N tunneling type, wherein the nonvolatile memory device comprises: the channel vertically extending from a substrate; a plurality of memory cells stacked along the channel; the source region connected to a first end portion of the channel; and a bit line connected to a second end portion of the channel, wherein the first end portion of the channel is formed as an undoped semiconductor layer or a semiconductor layer doped with P-type impurities, wherein the second end portion of the channel is formed of a semiconductor material of which a conductivity type is different from that of the first end portion, and wherein an intermediate portion of the channel between the first end portion and the second end portion is formed of a semiconductor material of which a conductivity type is same as that of the first end portion.