Cell-to-cell program interference aware data recovery when ECC fails with an optimum read reference voltage

摘要

An apparatus comprising a memory and a controller. The memory may be configured to process a plurality of read/write operations. The memory may comprise a plurality of memory modules each having a size less than a total size of the memory. The controller may be configured to recover data stored in the memory determined to exceed a maximum number of errors after performing a first read operation using a first read reference voltage. The controller may perform a second read operation using a second read reference voltage. The controller may identify a victim cell having a threshold voltage in a region between the first read reference voltage and the second read reference voltage. The controller may perform a third read operation on aggressor cells of the victim cell. The controller may perform a fourth read operation using the first read reference voltage with bit-fixed values on the victim cell based on a type of interference from the aggressor cells.

主权项

1. An apparatus comprising:
a memory configured to store data, the memory comprising a plurality of memory modules each having a size less than a total size of the memory; and a controller configured to process a plurality of read/write operations and recover data stored in the memory determined to exceed a maximum number of errors after performing a first read operation using a first read reference voltage, wherein the controller (i) performs a second read operation using a second read reference voltage, (ii) identifies a victim cell having a threshold voltage in a region between the first read reference voltage and the second read reference voltage, (iii) performs a third read operation on aggressor cells of the victim cell, and (iv) performs a fourth read operation using the first read reference voltage with bit-fixed values on the victim cell based on a type of interference from the aggressor cells.