发明名称 |
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device |
摘要 |
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
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申请公布号 |
US7160748(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20050063533 |
申请日期 |
2005.02.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIBASHI AKIHIKO;TSUJIMURA AYUMU;HASEGAWA YOSHIAKI;OTSUKA NOBUYUKI;SUGAHARA GAKU;MIYANAGA RYOKO;SHIMAMOTO TOSHITAKA;HARAFUJI KENJI;BAN YUZABURO;OHNAKA KIYOSHI |
分类号 |
H01L21/00;H01S5/30;H01L21/20;H01L21/205;H01L33/00;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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