SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a porous first interlayer insulating layer which includes a first and a second region, and has a low dielectric constant; a second interlayer insulating layer which is formed on the first interlayer insulating layer in the first region; a plurality of first conductive patterns which are separated from each other in the second interlayer insulating layer; at least one second conductive pattern which is formed in the first interlayer insulating layer in the second region; and an air gap which is arranged on a lateral surface of the first conductive patterns. So, the dielectric constant of an insulating layer between wires can be reduced.