| 主权项 |
1. A method of manufacturing MEMS components, comprising the steps of:
bonding a MEMS wafer stack to an integrated circuit wafer, the MEMS wafer stack having an inner side and an outer side, the MEMS wafer stack comprising a top cap wafer and a MEMS wafer, the top cap wafer having opposed inner and outer sides and insulated conducting channels extending through the top cap wafer between the inner side and the outer sides; the MEMS wafer having opposed first and second sides and insulated conducting channels extending through the MEMS wafer between the first side and the second side of the MEMS wafer, the MEMS wafer also including MEMS structures patterned therein, the top cap wafer and the MEMS wafer providing respective top and side walls for defining at least part of hermetically sealed chambers housing the corresponding MEMS structures, the inner side of the top cap wafer facing the first side of the MEMS wafer and the insulated conducting channels of the top cap wafer and of the MEMS wafer being aligned to form insulated conducting pathways; integrated circuit wafer has an inner side with electrical contacts, such that the inner side of the MEMS wafer stack is bonded to the inner side of the integrated circuit wafer such that the insulated conducting pathways extend from the electrical contacts of the integrated circuit wafer, through the MEMS wafer, through the top cap wafer, to the outer side of the MEMS wafer stack; forming electrical contacts on the outer side of the top cap wafer, the electrical contacts being respectively connected to the insulated conducting channels of the top cap wafer; and dicing the MEMS wafer stack and the integrated circuit wafer into MEMS components such that the MEMS components comprise the hermetically sealed chambers and MEMS structures. |
