| 摘要 |
According to one embodiment of a method of manufacturing a semiconductor device, a film stack in which a first film and a second film are alternately and repeatedly stacked is formed on a semiconductor substrate. Further, silicon oxide which is a first interlayer insulation film is formed at a non-stack area where the film stack is not disposed up to a predetermined height. Furthermore, a silicon compound film including at least one of nitride, carbon, and boron is embedded as a second interlayer insulation film in a recessed portion inside the non-stack area. Additionally, dry etching processing is simultaneously applied to the film stack, and the first and second interlayer insulation films by using a fluorocarbon-based gas. |
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming, on a semiconductor substrate, a film stack where a first film and a second film are alternately and repeatedly stacked; forming silicon oxide, which is a first interlayer insulation film, on a non-stack area where the film stack is not disposed up to a predetermined height; providing a recessed portion in an area having a film thickness of the silicon oxide larger than a predetermined value within the non-stack area; embedding, in the recessed portion, a silicon compound film including at least one of nitride, carbon, and boron as a second interlayer insulation film; simultaneously applying dry etching processing to the film stack and the first and second interlayer insulation films by using a fluorocarbon-based gas; and forming a groove pattern to segment the film stack, and the first and second interlayer insulation films. |
