MANUFACTURING METHOD OF PATTERNED STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

A manufacturing method of a patterned structure of a semiconductor device includes following steps. A plurality of support features are formed on a substrate. A first conformal spacer layer is formed on the support features and a surface of the substrate, a second conformal spacer layer is formed on the first conformal spacer layer, and a covering layer is formed on the second conformal spacer layer. A gap between the support features is filled with the first conformal spacer layer, the second conformal spacer layer, and the covering layer. A first process is performed to remove a part of the covering layer, the second conformal spacer layer, and the first conformal spacer layer. A second process is performed to remove the support features or the first conformal spacer layer between the support feature and the second conformal spacer layer to expose a part of the surface of the substrate.

主权项

1. A manufacturing method of a patterned structure of a semiconductor device, comprising:
forming a plurality of support features on a surface of a substrate, wherein two adjacent support features are isolated from each other by a gap; forming a first conformal spacer layer on the support features and the surface of the substrate; forming a second conformal spacer layer on the first conformal spacer layer; forming a covering layer on the second conformal spacer layer, wherein the gap between the support features is filled with the first conformal spacer layer, the second conformal spacer layer, and the covering layer, and the covering layer in the gap does not contact the surface of the substrate; after the step of forming the covering layer, performing a first process removing a part of the covering layer, a part of the second conformal spacer layer, and a part of the first conformal spacer layer so as to expose a part of the support features, a part of the first conformal spacer layer, and a part of the second conformal spacer layer; and performing a second process configured to remove the support features or the first conformal spacer layer between the support feature and the second conformal spacer layer so as to expose a part of the surface of the substrate, wherein a part of the second conformal spacer layer and a part of the first conformal spacer layer remain between the support feature and the covering layer in a horizontal direction before the second process, and the support features, the second conformal spacer layer and the first conformal spacer layer between the support feature and the covering layer in the horizontal direction are removed by the second process.