| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables improvement in reliability.SOLUTION: A semiconductor device of an embodiment comprises: a SiC substrate having a first surface and a second surface; an element region provided on the SiC substrate; an insulation film provided on the first surface around the element region; a p-type first SiC region provided on the first surface side of the SiC substrate and in contact with the insulation film; an n-type second SiC region provided between the first SiC region and the second surface; a first electrode which is provided on the insulation film and has a contact part for being electrically connected with the first SiC region; and a second electrode provided in contact with the second surface. A p-type impurity concentration of the SiC substrate just below a central part of the contact part is higher than a p-type impurity concentration of the SiC substrate just below ends of the contact part.SELECTED DRAWING: Figure 1 |
