SEMICONDUCTOR LASER

摘要

A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

主权项

1. A semiconductor laser comprising:
a stacked body disposed on an InP or GaAs substrate having an active layer including a quantum well layer the active aver having a cascade structure including a first region capable of emitting infrared laser light by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier injected from the first region alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light in a direction along which the ridge waveguide extends; and a dielectric layer provided so as to sandwich at least both sides of the active layer of the stacked body in a cross section, the dielectric layer having a refractive index lower than refractive indices of all lavers constituting the active layer, the dielectric layer being made of at least one single-crystal material of thallium bromoiodide, thallium bromochloride, ZnSe, CdTe, and diamond formed directly on the InP or GaAs substrate and including neither acceptors nor donors at a region adjacent to the side surfaces of the active layer.