发明名称 |
ATOMIC LAYER DEPOSITION CHAMBER WITH FUNNEL-SHAPED GAS DISPERSION CHANNEL AND GAS DISTRIBUTION PLATE |
摘要 |
Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate. |
申请公布号 |
WO2016172085(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
WO2016US28253 |
申请日期 |
2016.04.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RASHEED, Muhammad, M.;GANDIKOTA, Srinivas;SANCHEZ, Mario Dan;JIAN, Guoqiang;YANG, Yixiong;JADHAV, Deepak;AGARWAL, Ashutosh |
分类号 |
C23C16/455;C23C16/04;C23C16/44 |
主分类号 |
C23C16/455 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|