Hybrid laser including anti-resonant waveguides

摘要

Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.

主权项

1. A hybrid laser apparatus comprising:
a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, wherein the layers of the first semiconductor region include an ohmic contact layer coupled with a first electrical contact layer, a cladding layer coupled with the ohmic contact layer, a separated confinement hetero-structure (SCH) layer coupled with the cladding layer, a carrier blocking layer coupled with the SCH layer, a multiple quantum well (MQW) layer coupled with the SCH layer, and an indium phosphide layer coupled with the MQW layer, wherein a surface of the indium phosphide layer is coupled with a surface of a layer of a second semiconductor region; and the second semiconductor region coupled with the first semiconductor region, wherein the second semiconductor region includes at least a buried insulating layer and a silicon layer disposed on the buried insulating layer, and further includes:
an optical waveguide;a first trench disposed on a first side of the optical waveguide;a second trench disposed on a second side, opposite the first side, of the optical waveguide;a third trench disposed on the first side of the optical waveguide such that the first trench is between the third trench and the optical waveguide; anda fourth trench disposed on the second side of the optical waveguide such that the second trench is between the fourth trench and the optical waveguide, wherein the first, second, third and fourth trenches are disposed inside the silicon layer to have a portion of the silicon layer between a respective trench and the buried insulating layer, and wherein the first and second trenches define the optical waveguide.