Semiconductor device having through silicon vias and manufacturing method thereof

摘要

In The semiconductor device, a semiconductor substrate has first and second surfaces. A circuitry layer is formed over the first surface and a first insulating layer is further formed over the circuitry layer. A second insulating layer including a first insulating element is formed over the second surface. A third insulating layer including a second insulating element different from the first insulating element of the second insulating layer is formed over the second surface with an intervention of the second insulating layer therebetween. A penetration electrode penetrates through the semiconductor substrate, the circuitry layer, the first insulating layer, the second insulating layer and the third insulating layer.

主权项

1. A device comprising:
a semiconductor substrate including first and second surfaces opposing to each other; a circuitry layer formed over the first surface of the semiconductor substrate; a first insulating layer formed over the circuitry layer; a second insulating layer formed over the second surface of the semiconductor substrate and comprising a first insulating element; a third insulating layer formed over the second surface of the semiconductor substrate with an intervention of the second insulating layer therebetween and comprising a second insulating element different from the first insulating element of the second insulating layer; wherein the third insulating layer substantially covers the second insulating layer; a penetration electrode penetrating through the semiconductor substrate, the circuitry layer, the second insulating layer and the third insulating layer; a cylindrical insulating ring in the semiconductor substrate surrounding the penetration electrode and isolated from the penetration electrode by the semiconductor substrate in a direction parallel to the first surface of the semiconductor substrate; and a front electrode coupled to the penetration electrode, wherein the first insulating layer includes an opening and the front electrode is exposed from the opening of the first insulating layer, the front electrode being spaced apart from the first insulating layer.