| 摘要 |
An LED is provided to grow an insulating buffer layer with a low defect density on an inexpensive conductive substrate by using a buffer layer on which unevenness is formed. A first buffer layer(200) whose upper surface is uneven is formed on the upper surface of a substrate(100), made of a silicon-based or a germanium-based material. The substrate can be a silicon substrate, a silicon carbide substrate or a germanium substrate. A second buffer layer(300) is formed on the unevenness of the first buffer layer, made of an insulating nitride semiconductor. A plurality of light emitting cells(400) are formed on the second buffer layer, serially connected to the second buffer layer.
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