| 摘要 |
PURPOSE:To obtain an IGBT which can respond at a high speed by forming electrodes on an upper surface of a drain layer, and connecting an inductor between the electrode and a collector lead lug. CONSTITUTION:A drain electrode 8 connected to a drain N-type layer 2 is provided. The electrode 8, an emitter electrode 7 and a gate electrode 6 become electrodes for bonding pads on a chip surface. The electrode 8 is connected to a collector lead lug 12 connected to a collector P-type layer 1 vis a metal wire 15. The electrode 8 is connected to a drain lead lug 13, and an outer inductor 14 is connected between the lug 12 and the lug 13. In this case, a terminal of an IGBT becomes a 4-terminal of the lugs 12, 11, 10 and 13. |
