Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product

摘要

The invention is a method of improving a mechanically prepared surface of alpha silicon carbide for increasing the polytype purity of an epitaxial layer of beta silicon carbide grown thereon. The method comprises decreasing the frequency of exposed higher energy lattice positions along a mechanically prepared {0001} surface of a 6H alpha silicon carbide substrate by adding atoms to vacant lattice positions and by increasing the average height and separation between steps on a mechanically prepared {0001} surface of 6H silicon carbide.