| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability in specified wavelength range by composing a photo element part from either a light receiving element part or emitting element part and making active layers of these receiving and emitting element parts, using a specified compd. semiconductor. SOLUTION: On a semi-insulative GaAs substrate 1 a nondoped GaAs buffer layer 2, nondoped InGaAs channel layer 3a, n-InGaP carrier feed layer 3b, n<+> -GaAs contact layer 4, i-InGaAsN photoabsorptive layer 5, and nondoped InGaP cap layer 6 are epitaxially grown. A photoelectronic mobility transistor part 7 is formed as an electronic element part and photo diode part 8 as a photo element part on the substrate 1. Thus, a high reliability photoelectronic integrated circuit element can be obtained and semiconductor laser element can show a superior temp. characteristic. |
