| 摘要 |
PROBLEM TO BE SOLVED: To enhance the operating speed of a semiconductor integrated circuit by forming the semiconductor integrated circuit on a substrate having a com pound semiconductor layer on an embedded insulation layer. SOLUTION: On a Si substrate 2 an embedded insulation layer 3 is formed, a Si epitaxial layer 4 is formed on the insulation layer 3, a single-crystal compd. semiconductor layer 5 is formed on the single-crystal Si epitaxial layer 4, whereby the Si substrate 2, the embedded insulation layer 3, the Si epitaxial layer 4 and the single-crystal compound semiconductor layer 5 form a semiconductor substrate 1, and transistors 21 are formed as active elements on the substrate 1, using the semiconductor layer 5. Thus since the operating speed of the active elements 21 on the semiconductor layer 5 is improved, it is possible to improve the operating speed of the semiconductor integrated circuit.
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