| 摘要 |
PROBLEM TO BE SOLVED: To realize a method of manufacturing on SIO wafer to improve uniformity of thickness of a semiconductor layer. SOLUTION: This method comprises the processes for preparing a base substrate 11 and a semiconductor substrate 21, and forming a first insulating film 12 on the base substrate, forming a trench type first element isolating film 23 having a first depth on the side surface of the semiconductor substrate, forming a second trench type element isolating film 25 having a second depth which is deeper than the first depth against the first element isolating film, forming a second insulating film 26 on one side surface of the semiconductor substrate on which both element isolating films are formed, bonding the base substrate and semiconductor substrate to attain contact between the first and second insulating films, executing a primary polishing to the other side surface of the semiconductor substrate to expose the second element isolating film by defining this film as the polishing stop layer, etching the second element isolating film to give the equal depth to the second and first element isolating films; and executing a secondary polishing to the other side surface of the semiconductor substrate to form the semiconductor layer, by defining the first and second element isolating films as the polishing stop layer.
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