| 摘要 |
PROBLEM TO BE SOLVED: To set the temperature applied to a substrate to the temperature of low-melting-point liquid metal containing silicon by making contact between at least the surface of an insulating substrate and the low-melting-point liquid metal containing silicon. SOLUTION: A substrate 11 exhibiting insulating property at least on its surface is provided. A step for making contact between the surface of the substrate 11 and a low-melting-point metal liquid 12 containing silicon, by applying the low-melting-point liquid metal 12 containing silicon to the surface of the substrate 11, or by immersing the surface of the substrate 1 in the low-melting- point metal liquid 12 containing at least silicon; and a step for forming a poly- crystal silicon layer 13, by growing a crystal on the surface of the silicon substrate 11 in the low-melting-point metal liquid 12 by cooling; are provided.
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