发明名称 IMPROVEMENTS IN AVALANCHE PHOTO-DIODES
摘要 <p>The present invention provides an avalanche photo-diode detector arrangement comprising two avalanche photo-diodes, which are each reverse biased to just below their breakdown voltage, are arranged back-to-back and are arranged in series with an oscillating voltage source such that the photodiodes exceed their breakdown voltage out of phase with each other. The oscillating voltage has a period of at least twice and preferably between 4 and 32 times, the avalanche zone transit time of the photo diodes. The detector arrangement achieves low noise and is able to distinguish dark counts.</p>
申请公布号 WO2000038248(A1) 申请公布日期 2000.06.29
申请号 GB1999004306 申请日期 1999.12.17
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