GEIGER MODE AVALANCHE PHOTODIODE

摘要

A avalanche mode photodiode array (102) is fabricated using a silicon on insulator wafer and substrate transfer process. The array includes a plurality of photodiodes (100). The photodiodes (100) include an electrically insulative layer (206), a depletion region (204), and first (208) and second (210) doped regions. An interconnection layer (212) includes electrodes (214, 216) which provides electrical connections to the photodiodes. The photodiode array (102) is carried by a handle wafer (217).