| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which is superior in reliability and which can be made thin, small in size and high in heat dissipation. <P>SOLUTION: In a power semiconductor device in which a power semiconductor element with a first electrode and a second electrode provided on one surface thereof is mounted on a wiring substrate, a polymeric material which is electrically insulative and has a thixotropy of 1.2 or larger and a viscosity of 400 Pa s or smaller is prepared between a wiring, on which the first electrode of the power semiconductor element is mounted, a wiring on which the second electrode of the power semiconductor element is mounted in the wiring substrate; and the thickness of the polymeric material is larger than the thickness of the wiring. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
