THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which uses a zinc oxynitride layer as a channel and has intended characteristics.SOLUTION: A thin film transistor comprises a gate electrode 20, a first oxide semiconductor layer 41 used as a channel, a second oxide semiconductor layer 42 arranged on the first oxide semiconductor layer 41 and a gate insulation layer 30 arranged between the gate electrode 20 and the first oxide semiconductor layer 41. The first oxide semiconductor layer 41 and the second oxide semiconductor layer 42 contain zinc oxynitride as a major ingredient. The second oxide semiconductor layer 42 has an etching rate by an oxalic acid etchant smaller than that of the first oxide semiconductor layer 41.SELECTED DRAWING: Figure 1