发明名称 LIQUID COMPOSITION AND ETCHING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a liquid composition for etching copper or a metal compound composed mainly of copper formed on an oxide (IGZO) comprising indium, gallium, zinc and oxygen and to provide an etching method by bringing the liquid composition into contact with a substrate having copper or a metal compound composed mainly of copper.SOLUTION: A liquid composition includes (A) hydrogen peroxide, (B) an acid containing no fluorine atom, (C) one or more kinds of compounds selected from phosphonic acids, phosphate esters, 1H-tetrazole-1-acetic acid, 1H-tetrazole-5-acetic acid and 4-amino-1,2,4-triazole and (D) water and has a pH value of 5 or less. Copper or metal compounds 6a, 6b composed mainly of copper can be etched while suppressing damage to an oxide 9 comprising indium, gallium, zinc and oxygen by using the liquid composition.SELECTED DRAWING: Figure 2
申请公布号 JP2016108659(A) 申请公布日期 2016.06.20
申请号 JP20150208989 申请日期 2015.10.23
申请人 MITSUBISHI GAS CHEMICAL CO INC 发明人 TAKEUCHI HIDENORI;YUBE KUNIO
分类号 C23F1/18;C23F1/26;H01L21/28;H01L21/308;H01L21/336;H01L29/786 主分类号 C23F1/18
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