Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module

摘要

Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

主权项

1. A light emitting diode (LED) comprising:
a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer and configured to generate light; a second semiconductor layer formed on the active layer and having a complementary conductive type to the first semiconductor layer; and a reflection pattern formed between portions of a protective insulating layer formed on the second semiconductor layer and configured to reflect light generated in the active layer, the reflection pattern having a conductive barrier layer contacting the protective insulating layer, wherein the reflection pattern further comprises a reflective metal layer formed on the second semiconductor layer and configured to reflect light, and the conductive barrier layer shields top and side surfaces of the reflective metal layer, wherein the reflection pattern further comprises a stress relaxation layer formed between the reflective metal layer and the conductive barrier layer and configured to absorb stress caused by a difference in coefficient of thermal expansion between the reflective metal layer and the conductive barrier layer.