发明名称 Semiconductor light emitting element with conductive layer having outer edge positioned inside outer edge of laminated body
摘要 A semiconductor light emitting element of an embodiment includes a laminated body having first, second, and third semiconductor layers stacked on each other in a first direction, the third semiconductor layer being between the first and second semiconductor layers in the first direction. The laminated body includes a first region and a second region spaced from the first region a second direction which intersects the first direction. The first electrode is electrically connected to the first semiconductor layer. The second electrode is disposed between the first region and the second region along the second direction. The first conductive layer electrically connects the second semiconductor layer and the second electrode to each other. An outer edge of the first conductive layer is positioned inside an outer edge of the laminated body.
申请公布号 US9397267(B2) 申请公布日期 2016.07.19
申请号 US201514634878 申请日期 2015.03.01
申请人 Kabushiki Kaisha Toshiba 发明人 Katsuno Hiroshi;Ishiguro Akira
分类号 H01L33/50;H01L33/36;H01L33/40;H01L33/06;H01L33/32;H01L33/38;H01L33/62 主分类号 H01L33/50
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A semiconductor light emitting element comprising: a laminated body including: a first semiconductor layer,a second semiconductor layer, anda third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated body including an opening which penetrates the laminated body in a first direction from the first semiconductor layer to the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode disposed in the opening; and a first conductive layer connecting the second semiconductor layer and the second electrode to each other, wherein a first outer edge of the first conductive layer is positioned inside a second outer edge of the laminated body, the first outer edge being an outermost edge of the first conductive layer in a second direction which crosses the first direction.
地址 Tokyo JP