Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

摘要

Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer, and at least one barrier layer proximate the at least one well layer. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.

主权项

1. A semiconductor structure, comprising:
a GaN base layer having a polar growth plane with a growth plane lattice parameter of at least about 3.189 Angstroms; an active region disposed over the base layer, the active region comprising a plurality of layers of InGaN, the plurality of layers of InGaN including at least one InwGa1-wN well layer,
wherein 0.10≦w≦0.40, and at least one InbGa1-bN barrier layer, wherein 0.01≦b≦0.10; an electron blocking layer disposed on a side of the active region opposite the GaN base layer; a p-type bulk layer disposed on the electron blocking layer; and a p-type contact layer disposed on p-type bulk layer.