Epitaxial structures

摘要

An embodiment is a method. A first III-V compound semiconductor is epitaxially grown in a trench on a substrate, and the epitaxial growth is performed in a chamber. The first III-V compound semiconductor has a first surface comprising a facet. After the epitaxial growth, the first surface of the first III-V compound semiconductor is etched to form an altered surface of the first III-V compound semiconductor. Etching the first surface is performed in the chamber in situ. A second III-V compound semiconductor is epitaxially grown on the altered surface of the first III-V compound semiconductor. The epitaxial growth of the first III-V compound semiconductor may be performed in a MOCVD chamber, and the etch may use an HCl gas. Structures resulting from methods are also disclosed.

主权项

1. A structure comprising:
a (100) substrate comprising a trench, the trench being defined at least in part by a first isolation region on the substrate; a first III-V compound crystalline semiconductor in the trench, the first III-V compound crystalline semiconductor comprising a (113) surface distal from the substrate; and a second III-V compound crystalline semiconductor on the (113) surface of the first III-V compound crystalline semiconductor.