Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks

摘要

Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a high leakage dielectric layer sandwiched between two lower leakage dielectric layers. The low leakage layers can function to restrict the current flow across the selector device at low voltages. The high leakage dielectric layer can function to enhance the current flow across the selector device at high voltages.

主权项

1. A selector device comprising
a first layer,
wherein the first layer is operable as a first electrode; a second layer disposed on the first layer,
wherein the second layer comprises a dielectric layer,wherein the second layer comprises a material having a leakage current density less than 103 A/cm2 at 2 V; a third layer,
wherein the third layer comprises a dielectric layer,wherein the third layer comprises a material different from that of the second layer,wherein the third layer comprises a material having a leakage current density greater than 106 A/cm2 at 2 V; a fourth layer,
wherein the fourth layer comprises a dielectric layer,wherein the fourth layer comprises a material having a leakage current density less than 103 A/cm2 at 2 V; a fifth layer, and
wherein the fifth layer is operable as a second electrode.