| 摘要 |
Provided is a method with which a metal carbonitride film or metalloid carbonitride film can be manufactured at low temperature. A metal carbonitride film or metalloid carbonitride film is formed using a N-trialkylsilyl-1,2,3-triazole compound and/or a 1,2,4-triazole compound represented by general formula (1) as a nitrogen source. (In the formula, R can be the same or different and represents a hydrogen atom, a C1 to C5 straight, branched or cyclic alkyl group, or C1 to C5 trialkylsilyl group. The multiple Rs can also bond to each other to form a ring.) |
